[1] [1] ZHAO Yuan-an, HU Guo-hang, LIU Xiao-feng,et al. Laser conditioning technology and its applications［J］. Optics and Precision Engineering, 2016, 24(12): 2938-2947.

[2] [2] XU Zheng-ping, SHEN Hong-hai, XU Yong-sen. Review of the development of laser active imaging system with direct ranging［J］. Chinese Optics, 2015, 8 (1): 28-38.

[3] [3] LIU You-qiang, CAO Yin-hua. 5KW fiber coupling diode laser for laser processing［J］. Optics and Precision Engineering, 2015, 23(5): 1279-1287.

[4] [4] LI Jing, QIU Yun-tao, CAO Yin-hua, et al. High brightness tapered diode laser ［J］. Chinese Journal of Luminescence, 2016, 37(8): 990-995.

[5] [5] AN Ning, HAN Xing-wei, LIU Cheng-zhi, et al. Simulation analysis of 2 μm InGaAsSb/AlGaAsSb laser diode with dual waveguide［J］. Acta Photonica Sinica, 2016, 45(9): 0914001.

[6] [6] QIAO Zhong-liang, BO Bao-xue, GAO Xin, et al. High brightness high power broad area semiconductor lasers with no-absorption mode filter［J］. Chinese Journal of Lasers, 2011, 38(4): 13-18.

[7] [7] FIEBIG C, BLUME G, KASPARI C,et al. 12W high-brightness single-frequency DBR tapered diode laser［J］. Electronics Letters, 2008, 44(21): 1253-1255.

[8] [8] WALPOLE J N. Semiconductor amplifiers and lasers with tapered gain regions［J］. Optical & Quantum Electronics, 1996, 28(6): 623-645.

[9] [9] BORRUEL L, SUJECKI S, MORENO P, et al. Quasi-3-D simulation of high-brightness tapered lasers［J］. IEEE Journal of Quantum Electronics, 2004, 40(5): 463-472.

[10] [10] KALLENBACH S, KELEMEN M T, AIDAM R, et al. High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm［C］. SPIE, 2005, 5738: 406-415.

[11] [11] OSTENDORF R, KAUFEL G, MORITZ R,et al. 10W high-efficiency high-brightness tapered diode lasers at 976 nm［C］. SPIE, 2008, 6876: 61124-61124.

[12] [12] GOKDEN B, MANSURIPUR T S, BLANCHARD R, et al. High-brightness tapered quantum cascade lasers［J］. Applied Physics Letters, 2013, 102(5): 511-R.

[13] [13] PU Tao-fei, ZHANG Jing. High-power high beam quality tapered semiconductor laser［J］. Journal of Changchun University of Science and Technology, 2015, 38(2): 9-12.

[14] [14] RAWAL D S, SEHGAL B K, MURALIDHARANR, et al. Experimental study of the influence of process pressure and gas composition on GaAs etching characteristics in Cl2 /BCl3-based inductively coupled plasma［J］. Plasma Science and Technology, 2011, 13(2): 223.

[15] [15] LEE J W, JUNG P G, DEVRE M, et al. Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers［J］. Solid-State Electronics, 2002, 46(5): 685-688.

[16] [16] LUO Yue-chuan, HAN Shang-jun, WANG Xue-min, et al. Steepness of the etching of GaAs/AlGaAs multilayer［J］. Information and Electronic Engineering, 2011, 9(3): 347-350.

[17] [17] TANG Zhong-hua. Diagnosis of electronegative capacitively coupled plasma and surface treatment of materials［D］. Suzhou: Soochow University, 2013.

[18] [18] HUANG Hua-mao, HUANG Jiang-zhu, HU Xiao-long, et al. Effects of the height of nanorod structure on the photoluminescence spectra of GaN-based green LED ［J］. Chinese Journal of Luminescence, 2016, 37(8): 967-972.

[19] [19] ZHAO Yang-yong, LIU Wei-guo, XI Ying-xue. Surface planarization process of RB-SiC based on magnetron sputtering and ICP etching［J］. Acta Photonica Sinica, 2018, 47(3): 0324001.