Photonics Research, Volume. 8, Issue 8, 1381(2020)
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
[9] M. Grundmann. The Physics of Semiconductors: An Introduction Including Devices and Nanophysics(2006).
[27] M. Kneissl, J. Rass. III-Nitride Ultraviolet Emitters—Technology and Applications, 227(2016).
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Luca Sulmoni, Frank Mehnke, Anna Mogilatenko, Martin Guttmann, Tim Wernicke, Michael Kneissl. Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers[J]. Photonics Research, 2020, 8(8): 1381
Category: Optical and Photonic Materials
Received: Feb. 21, 2020
Accepted: Jun. 18, 2020
Published Online: Jul. 31, 2020
The Author Email: Luca Sulmoni (sulmoni@tu-berlin.de)