Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers

Luca Sulmoni; Frank Mehnke; Anna Mogilatenko; Martin Guttmann; Tim Wernicke; Michael Kneissl

doi:10.1364/PRJ.391075

Photonics Research, Volume. 8, Issue 8, 1381(2020)

Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers

Luca Sulmoni^1、*, Frank Mehnke¹, Anna Mogilatenko^2,3, Martin Guttmann¹, Tim Wernicke¹, and Michael Kneissl^1,2

Author Affiliations

¹Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany

²Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

³Institut für Physik, Humboldt Universität zu Berlin, 12489 Berlin, Germany

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Luca Sulmoni, Frank Mehnke, Anna Mogilatenko, Martin Guttmann, Tim Wernicke, Michael Kneissl, "Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers," Photonics Res. 8, 1381 (2020)

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Paper Information

Category: Optical and Photonic Materials

Received: Feb. 21, 2020

Accepted: Jun. 18, 2020

Published Online: Jul. 31, 2020

The Author Email: Luca Sulmoni (sulmoni@tu-berlin.de)

DOI:10.1364/PRJ.391075

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