Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications

Xiaohan Meng; Runsheng Gao; Xiaojian Zhu; Run-Wei Li

doi:10.1088/1674-4926/24100025

Journal of Semiconductors, Volume. 46, Issue 2, 021402(2025)

Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications

Xiaohan Meng^1,3, Runsheng Gao^1,2、*, Xiaojian Zhu^1,2、**, and Run-Wei Li^1,2

¹CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

²Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

³School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

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Xiaohan Meng, Runsheng Gao, Xiaojian Zhu, Run-Wei Li. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications[J]. Journal of Semiconductors, 2025, 46(2): 021402

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Paper Information

Category: Research Articles

Received: Oct. 16, 2024

Accepted: --

Published Online: Mar. 28, 2025

The Author Email: Gao Runsheng (RSGao), Zhu Xiaojian (XJZhu)

DOI:10.1088/1674-4926/24100025

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laser devices and laser physics

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