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Chinese Journal of Lasers, Volume. 45, Issue 5, 501002(2018)

Fabrication of Highly Reliable Watt-Level 660 nm Semiconductor Lasers

Zhu Zhen1, Zhang Xin1, Xiao Chengfeng1, Li Peixu1, Sun Sujuan1, Xia Wei1,2、*, and Xu Xiangang1,3
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    AbstractGet PDF(in Chinese)
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    Schematic of the red-semiconductor laser

    Fig. 1. Schematic of the red-semiconductor laser

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    PL spectra of the active layer in the area of as-grown (dash line) and Zn diffused (solid line)

    Fig. 2. PL spectra of the active layer in the area of as-grown (dash line) and Zn diffused (solid line)

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    P-I-V curves of the high power 660 nm semiconductor laser

    Fig. 3. P-I-V curves of the high power 660 nm semiconductor laser

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    Far-filed patterns of the high power 660 nm semiconductor laser

    Fig. 4. Far-filed patterns of the high power 660 nm semiconductor laser

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    Lasing spectrum of the high power 660 nm semiconductor laser measured at 1.5 A

    Fig. 5. Lasing spectrum of the high power 660 nm semiconductor laser measured at 1.5 A

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    Aging test of the high power 660 nm semiconductor lasers under air-cooled heat dissipation

    Fig. 6. Aging test of the high power 660 nm semiconductor lasers under air-cooled heat dissipation

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    Zhu Zhen, Zhang Xin, Xiao Chengfeng, Li Peixu, Sun Sujuan, Xia Wei, Xu Xiangang. Fabrication of Highly Reliable Watt-Level 660 nm Semiconductor Lasers[J]. Chinese Journal of Lasers, 2018, 45(5): 501002

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    Paper Information

    Category: laser devices and laser physics

    Received: Nov. 7, 2017

    Accepted: --

    Published Online: May. 21, 2018

    The Author Email: Wei Xia (sps_xiaw@ujn.edu.cn)

    DOI:10.3788/CJL201845.0501002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology