Journal of Inorganic Materials, Volume. 39, Issue 9, 1063(2024)

Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction

Jialin YANG1... Liangjun WANG1, Siyuan RUAN1, Xiulin JIANG2,3 and Chang YANG1,* |Show fewer author(s)
Author Affiliations
  • 11. Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
  • 22. Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang 212013, China
  • 33. Cell R&D Center, JA Solar Holdings Co., Ltd, Yangzhou 225000, China
  • show less
    References(43)

    [2] R WOODS-ROBINSON, Y B HAN, H Y ZHANG et al. Wide band gap chalcogenide semiconductors. Chemical Reviews, 4007(2020).

    [3] C ZHANG, V NICOLOSI. Graphene and MXene-based transparent conductive electrodes and supercapacitors. Energy Storage Materials, 102(2019).

    [5] H LIU, H LI, J TAO et al. Single crystalline transparent conducting F, Al, and Ga Co-doped ZnO thin films with high photoelectrical performance. ACS Applied Materials & Interfaces, 22195(2023).

    [6] F YUTAKA, H TARO, Y YUKIO et al. A transparent metal: Nb-doped anatase TiO2. Applied Physics Letters, 252101(2005).

    [7] J WILLIS, D SCANLON. Latest directions in p-type transparent conductor design. Journal of Materials Chemistry C, 11995(2021).

    [8] C YANG, M KNEISS, F L SCHEIN et al. Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109. Scientific Reports, 21937(2016).

    [10] C YANG, K MAX, L MICHAEL et al. Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit. Applied Physical Sciences, 12929(2016).

    [11] G MARIUS, S FRIEDRICH, L MICHAEL et al. Cuprous iodide-a p-type transparent semiconductor: history and novel applications. Physica Status Solidi A, 1671(2013).

    [12] T TANAKA, K KEISHI, H MASATAKA. Transparent, conductive CuI films prepared by rf-dc coupled magnetron sputtering. Thin Solid Films, 179(1996).

    [13] D KIM, M NAKAYAM, O KOJIM et al. Thermal-strain-induced splitting of heavy and light-hole exciton energies in CuI thin films grown by vacuum evaporation. Physical Review B, 13879(1999).

    [14] M ZI, J LI, Z ZHANG et al. Effect of deposition temperature on transparent conductive properties of γ-CuI film prepared by vacuum thermal evaporation. Phys. Status Solidi, 1466(2015).

    [15] H KANG, R LIU, K CHEN et al. Electrodeposition and optical properties of highly oriented γ-CuI thin films. Electrochim Acta, 8121(2010).

    [16] N YAMADA, Y KONDO, R INO. Low-temperature fabrication and performance of polycrystalline CuI films as transparent p-type semiconductors. Physica Status Solidi, 1700782(2019).

    [17] P STORM, M BAR, G BENNDORF et al. High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition. APL Materials, 091115(2020).

    [18] C YANG, E ROSE, W YU et al. Controllable growth of copper iodide for high-mobility thin films and self-assembled microcrystals. ACS Applied Electronic Materials, 3627(2020).

    [19] F GENG, Y WU, D SPLITH et al. Amorphous transparent Cu(S,I) thin films with very high hole conductivity. Journal of Physical Chemistry Letters, 6163(2023).

    [20] F GENG, L WANG, T STRALKA et al. (111)-oriented growth and acceptor doping of transparent conductive CuI:S thin films by spin coating and radio frequency-sputtering. Advanced Engineering Materials, 2201666(2023).

    [22] J CHA, D JUNG. Air-stable transparent silver iodide-copper iodide heterojunction diode. ACS Applied Materials Interfaces, 43807(2017).

    [23] Y NAOOMI, K YUUMI, C XIANG et al. Visible-blind wide-dynamic-range fast-response self-powered ultraviolet photodetector based on CuI/In-Ga-Zn-O heterojunction. Applied Materials Today, 153(2019).

    [24] S AKSHAI, A NANDAKUMAR, R RAMESH et al. Self-powered UV photodetectors based on heterojunctions composed of ZnO nanorods coated with thin films of ZnS and CuI. ACS Applied Nano Materials, 8529(2023).

    [25] Y ZHANG, S LI, W YANG et al. Millimeter-sized single-crystal CsPbrB3/CuI heterojunction for high-performance self-powered photodetector. Journal of Physical Chemistry Letters, 2400(2019).

    [26] Y WANG, C CHUANG. Solution processed CuI/n-Si junction device annealed with and without iodine steam for ultraviolet photodetector applications. Journal of Materials Science, 18622(2018).

    [27] W LI, W SHI. Growth habit and habit variation of γ-CuI crystallites under hydrothermal conditions. Crystal Research & Technology, 1041(2002).

    [28] Y ALIVOV, Ü ÖZGÜR, S DOĞAN et al. Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 241108(2005).

    [29] M LEE, S SEO, D KIM et al. A low-temperature grown oxide diode as a new switch element for high-density, nonvolatile memories. Advanced Materials, 73(2007).

    [30] M BRÖTZMANN, U VETTER, H HOFSÄSS. BN/ZnO heterojunction diodes with apparently giant ideality factors. Journal of Applied Physics, 063704(2009).

    [31] A SCHENK, U KRUMBEIN. Coupled defect level recombination: theory and application to anomalous diode characteristics. Journal of Applied Physics, 3185(1995).

    [32] O YASUHISA, M YOSHIAKI, S SHINGO et al. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors. Journal of Applied Physics, 161549(2018).

    [33] A, ALEC TALIN, F LEONARD, B SWART et al. Unusually strong space-charge-limited current in thin wires. Physical Review Letters, 076802(2008).

    [34] W YU, G BENNDORF, Y JIANG et al. Control of optical absorption and emission of sputtered copper iodide thin films. Physica Status Solidi (RRL)-Rapid Research Letters, 2000431(2020).

    [36] F LUO, H ZHOU, Y LIU et al. High-performance self-driven SnSe/Si heterojunction photovoltaic photodetector. Chemosensors, 406(2023).

    [37] S MUKHERJEE, R MAITI, A KATIYAR et al. Novel colloidal MoS2 quantum dot heterojunctions on silicon platforms for multifunctional optoelectronic devices. Scientific Reports, 29016(2016).

    [38] X AN, F LIU, Y JUNG et al. Tunable graphenesilicon heterojunctions for ultrasensitive photodetection. Nano Letters, 909(2013).

    [39] S LIM, D UM, M HA et al. Broadband omnidirectional light detection in flexible and hierarchical ZnO/Si heterojunction photodiodes. Nano Research, 22(2017).

    [40] P SAHATIYA, C REDDY, S BADHULIKA. Discretely distributed 1D V2O5 nanowires over 2D MoS2 nanoflakes for an enhanced broadband flexible photodetector covering the ultraviolet to near infrared region. Journal of Materials Chemistry C, 12728(2017).

    [41] W YIN, J YANG, K ZHAO et al. High responsivity and external quantum efficiency photodetectors based on solution-processed Ni-doped CuO films. ACS Applied Materials & Interfaces, 11797(2020).

    [42] Q HONG, Y CAO, J HU et al. Self-powered ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si nanowire array. ACS Applied Materials & Interfaces, 20887(2014).

    [43] Z SONG, Y LIU, Q WANG et al. Self-powered photodetectors based on a ZnTe-TeO2 composite/Si heterojunction with ultra- broadband and high responsivity. Journal of Materials Science, 7562(2018).

    Tools

    Get Citation

    Copy Citation Text

    Jialin YANG, Liangjun WANG, Siyuan RUAN, Xiulin JIANG, Chang YANG. Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction[J]. Journal of Inorganic Materials, 2024, 39(9): 1063

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Mar. 1, 2024

    Accepted: --

    Published Online: Dec. 13, 2024

    The Author Email: YANG Chang (cyang@phy.ecnu.edu.cn)

    DOI:10.15541/jim20240094

    Topics