<trans-title xml:lang="en">Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction</trans-title>

Jialin YANG; Liangjun WANG; Siyuan RUAN; Xiulin JIANG; Chang YANG

doi:10.15541/jim20240094

Journal of Inorganic Materials, Volume. 39, Issue 9, 1063(2024)

Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction

Jialin YANG1... Liangjun WANG1, Siyuan RUAN1, Xiulin JIANG2,3 and Chang YANG1,* |Show fewer author(s)

¹1. Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China

²2. Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang 212013, China

³3. Cell R&D Center, JA Solar Holdings Co., Ltd, Yangzhou 225000, China

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Figures & Tables(7)

1. Fabrication and testing schematic diagram(a) Schematic structure of the fabricated p⁺n type CuI/Si heterojunction diode; (b) Schematic diagram of the photodiode test

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2. Structural and electrical characterization of the obtained CuI thin film(a) XRD pattern; (b) PL spectrum; (c) Optical transmittance; (d) SEM image

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3. I-V characteristic curve of the CuI/Si heterojunction

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4. I-V characteristic curves of the CuI/Si photodiode under different laser light wavelengths with a light power density of 50 μW/cm²Dark current is plotted in dashed line; Colorful figure is available on website

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5. Responsivity of the CuI/Si photodiode as a function of light power density and responsivity under specific light intensity(a) 0 V bias applied; (b) -3 V bias applied; (c) 0 V bias applied under specific light intensity; (d) -3 V bias applied under specific light intensity

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Table 1.
Device parameters of the CuI/Si photodiodes

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Table 1.
Device parameters of the CuI/Si photodiodes

Wavelength/nm	Bias voltage/V	Responsivity (Weak/strong light)/(A·W^-1)	D* (Weak/strong light)/(×10¹³, Jones)	EQE (Weak/strong light)/%
400	0	0.08/0.06	0.363/0.241	26/17
400	-3	3.58/0.15	15.4/0.669	1109/48
505	0	0.31/0.14	1.35/0.618	77/35
505	-3	3.46/0.30	14.9/1.31	849/74
635	0	0.65/0.13	2.82/0.561	127/25
635	-3	4.00/0.90	17.3/3.88	782/175
780	0	1.15/0.20	4.94/0.844	182/31
780	-3	4.70/0.67	20.3/2.92	747/107

Table 2.
Summarization of photoelectric properties in Si-based photodiodes

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Table 2.
Summarization of photoelectric properties in Si-based photodiodes

Diode structure	Wavelength/nm	Power density/(μW·cm⁻²)	Bias voltage/V	D*/Jones	Responsivity/(A·W^-1)	EQE/%	Ref.
SnSe/Si	405	10	-4	3.4×10¹¹	0.21	-	[36]
	405	300	-4	3.0×10¹¹	0.18	-
	650	10	0	1.1×10¹¹	0.20	-
	650	300	0	1.0×10¹¹	0.17	-
MoS₂/Si	514	3	-2	2.2×10¹¹	1.25	-	[37]
MoS₂/Si	514	80	-2	8.0×10¹¹	0.90	-	[37]
Graphene-Si	730	10	-2	2.1×10⁸	0.35	-	[38]
Si/ZnO	550	-	-2	-	0.37	-	[39]
ZnTe-TeO₂/Si	350	-	0	4.0×10¹²	0.03	-	[43]
ZnTe-TeO₂/Si	850	-	0	1.4×10¹³	0.08	-	[43]
CuI/Si	400	0.5	-3	1.54×10¹⁴	3.58	1109	This work
	400	50	-3	6.69×10¹²	0.15	48
	780	0.5	0	4.94×10¹³	1.15	182
	780	50	0	8.44×10¹²	0.20	31

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Jialin YANG, Liangjun WANG, Siyuan RUAN, Xiulin JIANG, Chang YANG. Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction[J]. Journal of Inorganic Materials, 2024, 39(9): 1063

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