Microelectronics, Volume. 52, Issue 5, 905(2022)
Impact Research of Mixed-Mode Stress Damages on the 1/f Noise Characteristics in SiGe HBT Devices
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MA Yu, TANG Xinyue, LUO Ting, YI Xiaohui, ZHANG Peijian. Impact Research of Mixed-Mode Stress Damages on the 1/f Noise Characteristics in SiGe HBT Devices[J]. Microelectronics, 2022, 52(5): 905
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Received: Jun. 17, 2022
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Published Online: Jan. 18, 2023
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