Microelectronics, Volume. 52, Issue 5, 905(2022)

Impact Research of Mixed-Mode Stress Damages on the 1/f Noise Characteristics in SiGe HBT Devices

MA Yu1... TANG Xinyue2, LUO Ting2, YI Xiaohui2 and ZHANG Peijian2 |Show fewer author(s)
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    References(15)

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    [2] [2] RCKER H, HEINEMANN B. High-performance SiGe HBTs for next generation BiCMOS technology [J]. Semiconductor Science and Technology, 2018, 33(11): 1-1.

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    [12] [12] RAGHUNATHAN U S, CHAKRABORTY P S, BANTU T G, et al. Bias- and temperature-dependent accumulated stress modeling of mixed-mode damage in SiGe HBTs [J]. IEEE Trans Elec Dev, 2015, 62 (7): 2084-2091.

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    MA Yu, TANG Xinyue, LUO Ting, YI Xiaohui, ZHANG Peijian. Impact Research of Mixed-Mode Stress Damages on the 1/f Noise Characteristics in SiGe HBT Devices[J]. Microelectronics, 2022, 52(5): 905

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    Paper Information

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    Received: Jun. 17, 2022

    Accepted: --

    Published Online: Jan. 18, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220228

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