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Microelectronics, Volume. 52, Issue 5, 905(2022)

Impact Research of Mixed-Mode Stress Damages on the 1/f Noise Characteristics in SiGe HBT Devices

MA Yu1... TANG Xinyue2, LUO Ting2, YI Xiaohui2 and ZHANG Peijian2 |Show fewer author(s)
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    MA Yu, TANG Xinyue, LUO Ting, YI Xiaohui, ZHANG Peijian. Impact Research of Mixed-Mode Stress Damages on the 1/f Noise Characteristics in SiGe HBT Devices[J]. Microelectronics, 2022, 52(5): 905

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    Received: Jun. 17, 2022

    Accepted: --

    Published Online: Jan. 18, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220228

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology