Study of Film Uniformity on Large-Curvature Substrate Surface Based on Atomic Layer Deposition

Lin Lai; Yanghui Li; Hui Zhou; Haosheng Xia; Xiaoyu Liu; Chengliang Xia; Le Wang

doi:10.3788/LOP55.033101

Laser & Optoelectronics Progress, Volume. 55, Issue 3, 033101(2018)

Study of Film Uniformity on Large-Curvature Substrate Surface Based on Atomic Layer Deposition

Lin Lai, Yanghui Li^*, Hui Zhou, Haosheng Xia, Xiaoyu Liu, Chengliang Xia, and Le Wang

Author Affiliations

College of Optical and Electronic Technology, China Jiliang University, Hangzhou, Zhejiang 310018, China

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Figures & Tables(9)

Fig. 1. Internal structural diagram of 100-mm-diameter cylindrical reaction chamber. (a) Pedestal; (b) annular holes; (c) baffle; (d) wall of reaction chamber

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Fig. 2. Concentration distributions of TiCl4 gas on hemispheric substrate surface under different moments. (a) 100 ms; (b) 150 ms; (c) 200 ms; (d) 250 ms

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Fig. 3. Concentration distributions of precusors at different moments in propagation process. (a) 50 ms; (b) 100 ms; (c) 150 ms; (d) 200 ms

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Fig. 4. Fitting curves of film thicknesses on substrate surface at different places. (a) TiO2 films; (b) Al2O3 films

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Fig. 5. Fitting curves of film thicknesses on substrate surface under different heights. (a) TiO2 films; (b) Al2O3 films

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Fig. 6. Test results of hemispheric refectance spectra

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Table 1. Saturated vapor pressure, viscosity, and relative molecular mass of precursors
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Table 1. Saturated vapor pressure, viscosity, and relative molecular mass of precursors
Precursor H₂O TMA TiCl₄
Saturated vaporpressure /kPa 2.33 1.12 1.33
Viscosity /(Pa·s) 9.55×10^-6 5.00×10^-6 8.42×10^-6
Relative molecular mass 18.0153 72.0858 189.729

Table 2. Refractive indexes of materials after ALD
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Table 2. Refractive indexes of materials after ALD
Wavelength /nm 400 500 600 700
Refraction index of Al₂O₃ 1.639 1.630 1.627 1.626
Refraction index of TiO₂ 2.60 2.48 2.36 2.32

Table 3. Process parameters for Al2O3 and TiO2 films
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Table 3. Process parameters for Al2O3 and TiO2 films
Film Precursor Pulse time /s Purge time /s
Al₂O₃ TMA 0.5 8
H₂O 0.5 10
TiO₂ TiCl₄ 0.43 12
H₂O 0.5 12

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Lin Lai, Yanghui Li, Hui Zhou, Haosheng Xia, Xiaoyu Liu, Chengliang Xia, Le Wang. Study of Film Uniformity on Large-Curvature Substrate Surface Based on Atomic Layer Deposition[J]. Laser & Optoelectronics Progress, 2018, 55(3): 033101

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