Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

Bosen Liu; Guohao Yu; Huimin Jia; Jingyuan Zhu; Jiaan Zhou; Yu Li; Bingliang Zhang; Zhongkai Du; Bohan Guo; Lu Wang; Qizhi Huang; Leifeng Jiang; Zhongming Zeng; Zhipeng Wei; Baoshun Zhang

doi:10.1088/1674-4926/24010025

Journal of Semiconductors, Volume. 45, Issue 7, 072501(2024)

Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

Bosen Liu^1,2, Guohao Yu^2,3, Huimin Jia¹, Jingyuan Zhu¹, Jiaan Zhou², Yu Li², Bingliang Zhang³, Zhongkai Du³, Bohan Guo², Lu Wang¹, Qizhi Huang², Leifeng Jiang², Zhongming Zeng², Zhipeng Wei^1、*, and Baoshun Zhang^2、**

Author Affiliations

¹State Key Laboratory of High-Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun 130022, China

²Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

³Suzhou Powerhouse Electronics Technology Co., Ltd., Suzhou 215123, China

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References(35)

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Bosen Liu, Guohao Yu, Huimin Jia, Jingyuan Zhu, Jiaan Zhou, Yu Li, Bingliang Zhang, Zhongkai Du, Bohan Guo, Lu Wang, Qizhi Huang, Leifeng Jiang, Zhongming Zeng, Zhipeng Wei, Baoshun Zhang. Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer[J]. Journal of Semiconductors, 2024, 45(7): 072501

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Paper Information

Category: Articles

Received: Jan. 22, 2024

Accepted: --

Published Online: Jul. 18, 2024

The Author Email: Wei Zhipeng (ZPWei), Zhang Baoshun (BSZhang)

DOI:10.1088/1674-4926/24010025

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