Researching | The study of lithographic variation in resistive random access memory

Journal of Semiconductors, Volume. 45, Issue 5, 052303(2024)

The study of lithographic variation in resistive random access memory

Yuhang Zhang, Guanghui He, Feng Zhang, Yongfu Li^*, and Guoxing Wang

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Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, China

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Yuhang Zhang, Guanghui He, Feng Zhang, Yongfu Li, Guoxing Wang. The study of lithographic variation in resistive random access memory[J]. Journal of Semiconductors, 2024, 45(5): 052303

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Paper Information

Category: Articles

Received: Dec. 13, 2023

Accepted: --

Published Online: Jul. 8, 2024

The Author Email: Li Yongfu (YFLi)

DOI:10.1088/1674-4926/45/5/052303

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