Fig. 1. Schematic diagram of polarization measurement principle

Fig. 2. DAC structure and optical path reflection diagram

Fig. 3. Schematic diagram of multilayer reflection in DAC

Fig. 4. Schematic diagram of in situ high pressure ellipsometry measurement system

Fig. 5. Flowchart of monocrystalline silicon preparation

Fig. 6. Comparison of simulation results of ellipsometry parameter measurement for monocrystalline silicon at multiple angles oblique incidence

Fig. 7. Comparison result of real part of refractive index

Fig. 8. Ellipsometry parameter results of monocrystalline silicon under pressure loading

Fig. 9. Raman measurement results of monocrystalline silicon under pressure loading

Fig. 10. Comparison of experimental simulation of monocrystalline silicon ψ value under pressure loading

Fig. 11. Refractive index of monocrystalline silicon under pressure loading