Opto-Electronic Advances, Volume. 4, Issue 6, 200030-1(2021)

High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

Cizhe Fang1, Qiyu Yang1, Qingchen Yuan2, Xuetao Gan2、*, Jianlin Zhao2, Yao Shao3, Yan Liu1, Genquan Han1, and Yue Hao1
Author Affiliations
  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
  • 2MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
  • 3Shanghai Energy Internet Research Institute of State Grid, 251 Libing Road, Pudong New Area, Shanghai 201210, China
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    Cizhe Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Yan Liu, Genquan Han, Yue Hao. High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces[J]. Opto-Electronic Advances, 2021, 4(6): 200030-1

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    Paper Information

    Category: Original Article

    Received: Jul. 11, 2020

    Accepted: Sep. 23, 2020

    Published Online: Sep. 1, 2021

    The Author Email: Gan Xuetao (xdliuyan@xidian.edu.cn)

    DOI:10.29026/oea.2021.200030

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