Opto-Electronic Advances, Volume. 4, Issue 6, 200030-1(2021)

High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

Cizhe Fang1, Qiyu Yang1, Qingchen Yuan2, Xuetao Gan2、*, Jianlin Zhao2, Yao Shao3, Yan Liu1, Genquan Han1, and Yue Hao1
Author Affiliations
  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
  • 2MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
  • 3Shanghai Energy Internet Research Institute of State Grid, 251 Libing Road, Pudong New Area, Shanghai 201210, China
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    Figures & Tables(5)
    (a) Simulated Q factor and resonant wavelength as a function of θ (top) and l (bottom), respectively. Inset: the schematic view of the model (a square block with l=0.4 μm). (b) Simulated transmission spectrum as a function of the angle and wavelength. Inset: the magnetic field profiles under the normal incidence condition, where white arrows correspond to electric field vectors and the black wireframe outlines the single unit. (c) Modeled the Q factor as a function of a for a broken-symmetry square block (l=0.4 μm). Bottom inset: the schematic image of the concave Si block. The top two insets show the magnetic field distributions at around a=0 μm and a=0.4 μm, respectively. (d) Simulated Q factor and resonant wavelength as a function of θ (top) and l (bottom) for the BIC mode at a=0.4 μm. The top inset: simulated Q factor as a function of l at θ=19°. The bottom left inset: the schematic view of the model (a rectangle block with l1=0.3 μm). The bottom right inset: the magnetic field profile at θ=0°. The scaling parameter is set as 1.2 in (a−d).
    (a) Dependence of the Q factor on asymmetry parameter β for both designs (log-log scale). Inset: two definitions of the asymmetry parameter. (b) Simulated Q in momentum space at a=0 μm (left) and a=0.4 μm (right). Inset: the designed patterns shown in the xy plane for both cases. (c) Schematic image of a period metasurface with concave nanopillars. Inset: device fabrication process. (d) SEM image of the fabricated metasurface.
    (a) Measured transmission spectrum at different s (20×20 array). Inset: The magnetic field distribution in the yz plane for the metasurface with the substrate. (b) Polarization dependence measurements of the transmission (Texp) and reflection (Rexp) spectra at a wavelength of 1.55 μm and their corresponding calculations (i.e. Tsim and Rsim). The arrow indicates the direction of the x-axis. (c) Top: Modeled the calculated and measured Q factor as a function of a (s=1.2 and b=0.1 μm). Inset: SEM image of the single unit at a=0.02 μm and a=0.32 μm, respectively. Bottom: The evolution of Q factor at different α for two definitions (log-log scale). (d) Numerically simulated dependence of the resonant wavelength and Q factor on tsub (tsub=0 μm means that there is no substrate). The top inset shows the comparison of the measured Q factor for different dimensions and array sizes. Structure 1: l=0.4 μm, a=0.15 μm, b=0.1 μm, and s=1.15. Structure 2: l=0.5 μm, a=0.1 μm, b=0.1 μm, and s=1.02. The bottom inset shows the SEM images of the prepared structures before and after the process optimization.
    Magnitude plots of the on-resonance magnetic field for the isolated resonator and 3×3, 5×5, 7×7, and 9×9 arrays. The magnetic field distributions are obtained at the vertical mid-plane of the blocks and the magnitude is indicated by the height. The structural parameters are l =0.4 μm, a=0.15 μm, b=0.1 μm, s=1.2. The table on the right shows the corresponding Q factors.
    (a) Measured transmission spectrum of the proposed metasurface (200×200 array) and its fitting of Fano function. Optimized structural parameters are p=0.6 μm, l=0.5 μm, a=0.1 μm, b=0.1 μm, s=1.05. (b) Comparison of THG in the proposed structure (red line) and a flat Si film with the same thickness (black line). The intensity of the THG in the flat Si film is amplified 100 times. (c) The electric field profiles at the resonance (left) and the off-resonance (right), respectively. (d) The corresponding polarization dependence measurements (normalized to the peak value of the resonance).
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    Cizhe Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Yan Liu, Genquan Han, Yue Hao. High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces[J]. Opto-Electronic Advances, 2021, 4(6): 200030-1

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    Paper Information

    Category: Original Article

    Received: Jul. 11, 2020

    Accepted: Sep. 23, 2020

    Published Online: Sep. 1, 2021

    The Author Email: Gan Xuetao (xdliuyan@xidian.edu.cn)

    DOI:10.29026/oea.2021.200030

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