Journal of Synthetic Crystals, Volume. 52, Issue 12, 2156(2023)

Growth and Scintillation Properties of Gd3(Al,Ga)5O12∶Ce Crystal

WANG Haili1,2、*, LI Hui1,2, ZHOU Nanhao1,2, SHI Shuangshuang1,2, SU Jian2, ZHANG Wei1,2, CHEN Jianrong1,2, and HUANG Cunxin1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Ce3+ doped gadolinium aluminum gallium garnet (GAGG∶Ce) scintillation crystal has the advantages of high light output, high energy resolution, short decay time, no self radiation and nondeliquescence, which make it has a broad application prospect in nuclear medical imaging, security inspection and environment detection et al. This paper reported the Czochralski growth and scintillation properties of GAGG∶Ce single crystal. GAGG∶Ce raw material was synthesized by high temperature solid state reaction method. By means of XRD analysis, the raw material sintered at 1 500 ℃ for 12 h is verified to be pure GAGG phase. GAGG∶Ce crystal with size of 50 mm×90 mm was successfully grown by Czochralski method. The transmission spectrum, Xray excited emission spectrum and pulse height spectrum of the crystal were tested. Results show that optical transmittance at 550 nm for the sample with thickness of 7 mm reaches as high as 81.5%. The Xray excited emission peak central wavelength of the GAGG∶Ce crystal is located at 550 nm. The light output of the GAGG∶Ce crystal is 59 000 photons/MeV and the energy resolution is 6.2%@662 keV. The decay time is 149 ns and a slow component of 748 ns.

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    WANG Haili, LI Hui, ZHOU Nanhao, SHI Shuangshuang, SU Jian, ZHANG Wei, CHEN Jianrong, HUANG Cunxin. Growth and Scintillation Properties of Gd3(Al,Ga)5O12∶Ce Crystal[J]. Journal of Synthetic Crystals, 2023, 52(12): 2156

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    Paper Information

    Category:

    Received: Sep. 25, 2023

    Accepted: --

    Published Online: Jan. 3, 2024

    The Author Email: Haili WANG (hailiwang02@163.com)

    DOI:

    CSTR:32186.14.

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