In this work, InGaAs/GaAs multi-layers quantum dots are grown by using MOCVD technique and ridge-like stripe structures are fabricated. It is shown that the threshold current density is dependent on the QDs structure. The threshold current density is greatly lowered by using multi-layers quantum dots, coupled QDs layers and wide band gap barriers. The minimum average threshold current density of 20 A/cm 2 is achieved. The lasing wavelength is also dependent on the active region. With increasing the number of QDs layers, the lasing peak will move to long wavelength end.