Growth and characterization of Mg2SiO4:Cr3+single crystals

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 17, Issue 6, 365(1990)

Growth and characterization of Mg₂SiO₄:Cr³⁺single crystals

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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Mg2SiO4:Cr3+ single crystals were growh by Czoehralski method for the first time in China. Characterization of crystal growth, its structure and morphology wre described. The absorption spectrum and fluorescence spectrum of Mg2SiO4:Cr were measured. Vibronic side band of the fluorescence spectrum in our Cr3+:Mg2SiO4 crystals ranges from 800nm to 1400nm and the absorption band of Fe3+ wore observed.

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Czochralski method Mg2SiO4:Cr3+

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and characterization of Mg₂SiO₄:Cr³⁺single crystals[J]. Chinese Journal of Lasers, 1990, 17(6): 365

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Paper Information

Category: materials and thin films

Received: Aug. 11, 1989

Accepted: --

Published Online: Nov. 12, 2007

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology