Study on induced doping to semiconductor by e-beam controlled discharge CO<sub>2</sub>laser

[in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 19, Issue 8, 606(1992)

Study on induced doping to semiconductor by e-beam controlled discharge CO₂laser

[in Chinese]¹, [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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Abstract Get PDF(in Chinese)

The pulse energy of c-bsam controlled disoharge CO2 lagsr is 50 J. The diameter of light spot is 60 ram and after being foeusad it bscomes to 20 mm. The induced doping of stibium (Sb) or aluminium (Al) in silicon (Si) is carried out by CO2 laser. A shallower of p-n janctionwith a diamatar of 10-15mm (mix. 20 mm) and a dapth of 0.2-0.7um is obtained. Photo-voltage of p-n junction is about 500 mV.

Keywords

controlled discharge induced doping e-beam

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[in Chinese], [in Chinese], [in Chinese]. Study on induced doping to semiconductor by e-beam controlled discharge CO₂laser[J]. Chinese Journal of Lasers, 1992, 19(8): 606

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Paper Information

Category: laser manufacturing

Received: Aug. 27, 1990

Accepted: --

Published Online: Sep. 11, 2007

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DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology