Chinese Journal of Lasers, Volume. 40, Issue 2, 202004(2013)

Ring Semiconductor Laser with Multi-Ring Coupling Structure

Zhang Siyu1、*, Qiao Zhongliang1, Zhou Lu1, Wang Yunhua1, Jia Baoshan1, Liu Chunling2, Bo Baoxue1, Gao Xin1, and Qu Yi1
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    To improve the spectral purity, brightness and stability of semiconductor lasers, multi-ring coupling structure of the semiconductor laser is investigated. Based on the structure of multi-ring coupling and output of the curved active waveguide, spectral purity brightness, and output stability of ring laser structure are greatly improved. The parallel far-field divergence angle of slow axis is up to 2.7° and output power of 10 mW is obtained. Spectral width reaches 0.26 nm at 821 nm, the Q factor is up to 2737. It is found that the multi-ring coupling structure laser device owns current modulation characteristics with its spectrum, whose modulation range is closed to 15 nm. Meanwhile, the operation current owns a certain modulation to spectral width, whose modulation capability is about 0.2 nm. The optimized multi-ring coupling structure laser output spectral width narrowed to 0.2 nm and a Q factor of 4040 is obtained.

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    Zhang Siyu, Qiao Zhongliang, Zhou Lu, Wang Yunhua, Jia Baoshan, Liu Chunling, Bo Baoxue, Gao Xin, Qu Yi. Ring Semiconductor Laser with Multi-Ring Coupling Structure[J]. Chinese Journal of Lasers, 2013, 40(2): 202004

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    Paper Information

    Category: Laser physics

    Received: Aug. 27, 2012

    Accepted: --

    Published Online: Jan. 25, 2013

    The Author Email: Siyu Zhang (yu820808@163.com)

    DOI:10.3788/cjl201340.0202004

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