Optoelectronics Letters, Volume. 21, Issue 7, 402(2025)
Characterization of high-performance AlGaN-based solar-blind UV photodetectors
This study begins with the fabrication and simulation of high-performance back-illuminated AlGaN-based solar-blind ultraviolet (UV) photodetectors. Based on the photodetectors, a low-noise, high-gain UV detection system circuit is designed and fabricated, enabling the detection, acquisition, and calibration of weak solar-blind UV signals. Experimental results demonstrate that under zero bias conditions, with a UV light power density of 3.45 μW/cm2 at 260 nm, the sample achieves a peak responsivity (R) of 0.085 A∙W-1, an external quantum efficiency (EQE) of 40.7%, and a detectivity (D*) of 7.46×1012 cm·Hz1/2·W-1. The system exhibits a bandpass characteristic within the 240—280 nm wavelength range, coupled with a high signal-to-noise ratio (SNR) of 39.74 dB.
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FU Yuting, LIU Bing, ZHAN Jie, ZHENG Fu, SUN Zhaolan. Characterization of high-performance AlGaN-based solar-blind UV photodetectors[J]. Optoelectronics Letters, 2025, 21(7): 402
Received: Apr. 26, 2024
Accepted: Jul. 24, 2025
Published Online: Jul. 24, 2025
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