Chinese Optics Letters, Volume. 11, Issue s1, S10502(2013)
Black Silicon nanostructures on silicon thin films prepared by reactive ion etching
In this letter, the application of dry etching to prepare Black Silicon nanostructures on crystalline silicon thin films on glass is described. The utilized reactive ion etching with an inductively coupled plasma (ICP-RIE) of SF6 and O2 is discussed and a remarkable increase in light absorption of about 70% is demonstrated.
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Martin Steglich, Thomas Kasebier, Ingmar Hoger, Kevin Fuchsel, Andreas Tunnermann, Ernst-Bernhard Kley, "Black Silicon nanostructures on silicon thin films prepared by reactive ion etching," Chin. Opt. Lett. 11, S10502 (2013)
Category: Coatings for solar cell
Received: Nov. 29, 2012
Accepted: Dec. 30, 2012
Published Online: May. 30, 2013
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