Journal of Advanced Dielectrics, Volume. 11, Issue 3, 2140004(2021)
Influence of CuO addition on dielectric and piezoelectric properties of (Na)–lead-free piezoceramics
M. Difeo***, L. Ramajo*, and M. Castro*
Author Affiliations
Research Institute of Materials Science and Technology (INTEMA), UNMdP – CONICET Av. Colón 10850, B7606BWV Mar del Plata, Argentinashow less
Doping effects of CuO on the sintering behavior and electrical properties of 0.94(TiO3–0.06(–CuO (BNT–BT6–Cu) lead-free piezoceramic obtained by the conventional solid-state reaction method were investigated. Regarding the undoped system, it is already known that it presents the best densification values when it is sintered at 1150C, however, the doped system was sintered at 1150C, 1100C, 1050C, 1025C, and 975C to determine the effect of Cu on the densification process. Therefore, it was obtained that the CuO-doped samples sintered at 1050C presented the highest density values and therefore were the ones chosen to perform the characterization tests together with the undoped system. The samples were characterized using X-ray diffraction (XRD), Raman microspectroscopy, and scanning electron microscopy (SEM) analysis, whereas the ferroelectric and dielectric properties were evaluated by means of ferroelectric hysteresis loops and impedance spectroscopy studies. As a result, the addition of CuO allowed an improvement in sinterability and densification, with the subsequent grain growth, and the improvement of the piezoelectric coefficient (.Doping effects of CuO on the sintering behavior and electrical properties of 0.94(TiO3–0.06(–CuO (BNT–BT6–Cu) lead-free piezoceramic obtained by the conventional solid-state reaction method were investigated. Regarding the undoped system, it is already known that it presents the best densification values when it is sintered at 1150C, however, the doped system was sintered at 1150C, 1100C, 1050C, 1025C, and 975C to determine the effect of Cu on the densification process. Therefore, it was obtained that the CuO-doped samples sintered at 1050C presented the highest density values and therefore were the ones chosen to perform the characterization tests together with the undoped system. The samples were characterized using X-ray diffraction (XRD), Raman microspectroscopy, and scanning electron microscopy (SEM) analysis, whereas the ferroelectric and dielectric properties were evaluated by means of ferroelectric hysteresis loops and impedance spectroscopy studies. As a result, the addition of CuO allowed an improvement in sinterability and densification, with the subsequent grain growth, and the improvement of the piezoelectric coefficient (.