Chinese Journal of Lasers, Volume. 29, Issue 12, 1110(2002)

Field Electron Emission of Amorphous Boron Nitride Film

[in Chinese]1,2, [in Chinese]1, [in Chinese]3, [in Chinese]2, and [in Chinese]3、*
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    Amorphous boron nitride thin film was prepared on the titanium coated ceramic substrate by pulsed laser deposition technique (PLD). The microstructure of the film was examined by using X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The electron field emission characteristics were investigated. The turn-on field was 4.6 V/μm. The current density was 50 μA/cm 2 at an electric field of 9 V/μm.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Field Electron Emission of Amorphous Boron Nitride Film[J]. Chinese Journal of Lasers, 2002, 29(12): 1110

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    Paper Information

    Category: materials and thin films

    Received: Apr. 28, 2002

    Accepted: --

    Published Online: Aug. 8, 2006

    The Author Email: (blzhang@zzu.edu.cn)

    DOI:

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