Based on the photovoltage effect of p-n junction, UV detectors with excellent performance can be constructed. In this paper, vertically aligned ZnO nanorod arrays (n-type) ZnO-NRs were controllable prepared by hydrothermal method. The p-type polyaniline (PANI-NWs) was modified on the surface of ZnO-NRs by in-situ polymerization, and then assembled into ZnO-NRs and ZnO-NRs/PANI-NWs UV detectors. The morphology, structure and optical properties of the samples were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflection spectroscopy. The current time (I-t) and current voltage (I-V) curves were measured by electrochemical workstation to characterize the light response properties. The results show that the ZnO-NRs/PANI-NW smaterials are arranged orderly, the interface contact is good, and the pores are uniform. When the ZnO-NRs/PANI-NWs detector detects 365 nm ultraviolet light, the photocurrent can reach 2.73×10-4 A; at 254 nm, the photocurrent can reach 1.44 × 10-4A, and its peak value is 4 to 10 times that of ZnO-NRs detector. The increase of photoconductivity is closely related to the p-n junction formed between ZnO-NRs and PANI-NWs. The UV detector assembled with ZnO-NRs/PANI-NWs material shows good stability, fast corresponding speed, short recovery time and high current gain, which provides data support for the development of high performance.