Active laser jamming is an effective means to counter infrared imaging seekers, and the saturation threshold under different incident conditions is the core parameter for studying the jamming effect on infrared imaging seekers. To obtain the saturation threshold of infrared imaging seekers under strong laser irradiation, the modeling and simulation of continuous laser jamming on short-wave, medium-wave, and long-wave infrared HgCdTe detectors is conducted based on the COMSOL multi-physics simulation platform. Firstly, models of HgCdTe material and typical planar junction HgCdTe pixel structures are constructed. Then, the electromagnetic wave and semiconductor coupling multi-physics interface is used to calculate the photovoltaic effect, and the effects of different laser wavelengths, powers, operating temperatures, and other factors on the photogenerated electromotive force of zero-bias HgCdTe infrared detector pixels are analyzed to demonstrate the feasibility of simulating laser irradiation effects using the COMSOL multi-physics simulation platform. The simulation results can provide a reference for semi-physical simulation of laser jamming effects.