A pixel circuit design for active laser and passive infrared detection is proposed. The pixel center distance is 30 μm. The direct current (DC) elimination feedback circuit is introduced to improve the laser detection sensitivity, and the pulse-width modulation technology is combined to achieve the dynamic range extension of infrared imaging. The circuit is designed and verified using a 180 nm complementary metal-oxide-semiconductor (CMOS) process. In laser detection mode, the eliminated DC reaches up to 5.3 μA, the amplitude sensitivity is 0.5 μA, and the pulse width sensitivity is 2.3 ns. In the infrared imaging mode, the dynamic range of the traditional high- and low-gain modes are 65.3 dB and 69.1 dB, respectively. Pulse width modulation technology can extend the dynamic range by 60 dB.