Based on the sensor response and the electronic diffusion principle， several main factors that should affect the crosstalk characteristics of CMOS array are analyzed. Several common optoelectronic materials， such as germanium， silicon， and gallium arsenide， are selected to analyze the influence of material properties on the crosstalk characteristics of CMOS arrays. The crosstalk voltages of the devices with different material are calculated under different incident conditions. The results show that under the same conditions， the CMOS array made of germanium material has the largest electrical crosstalk output. When the structural conditions are consistent and the power of the incident light is 200 μW， the crosstalk of germanium material CMOS array is 58.97 mV and 115.81 mV higher than which made of silicon and gallium arsenide materials， respectively. Structural parameters have the same influence rules on CMOS arrays of different materials， but the crosstalk changes of germanium material CMOS are the most significant. While other parameters remain unchanged， when the depletion layer width is 1 μm， the crosstalk output of germanium material CMOS is 56.67 mV and 121.84 mV higher than which made of silicon and gallium arsenide materials， respectively. The analysis results provide theoretical reference data for optimization and crosstalk processing of CMOS array in practice.