Frontiers of Optoelectronics, Volume. 9, Issue 2, 151(2016)

Novel optoelectronic characteristics from manipulating general energy-bands by nanostructures

Yidong HUANG*, Kaiyu CUI, Fang LIU, Xue FENG, and Wei ZHANG
Author Affiliations
  • State Key Lab of Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology,Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
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    This paper summarizes our research work on optoelectronic devices with nanostructures. It was indicated that by manipulating so called “general energybands” of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton (SPP), novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact (8 μm × 17.6 μm) footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hetero optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption (TSPA), and realized diffraction-limit-overcoming photolithography with resolution of ~1/11 of the exposure wavelength.Prof. Huang authored/co-authored more than 300 journal and conference papers. She is a senior member of the IEEE.

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    Yidong HUANG, Kaiyu CUI, Fang LIU, Xue FENG, Wei ZHANG. Novel optoelectronic characteristics from manipulating general energy-bands by nanostructures[J]. Frontiers of Optoelectronics, 2016, 9(2): 151

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    Paper Information

    Category: REVIEW ARTICLE

    Received: Jan. 29, 2016

    Accepted: Feb. 15, 2016

    Published Online: Oct. 21, 2016

    The Author Email: Yidong HUANG (yidonghuang@tsinghua.edu.cn)

    DOI:10.1007/s12200-016-0615-2

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