A wet chemical etching process for lead zirconate titanate (PbZrxTi1?xO3 or PZT) thin films is reported. The influences of the etchant compositions, temperatures, and concentrations on the etching rate are studied, and the patterning of PZT thin films is successfully attained using the wet chemical etching process. The relationship between the etching ratio and the ratio of lateral to thickness of less than 1:1.07 is obtained. Furthermore, there is no residue on the pattern. The selectivity of etchant for the photosensitive resist mask and Pt electrode is shown to be good. This process is suitable for the patterning of PZT thin film, of which line width reaches the micrometer range.