In this paper, we report research results of 1 280×1 024 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays. The detector structure is PN-NP epitaxial multilayer and the signal is read out by sequential mode. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. The respective structures of each absorption region are Mid-Wavelength 1(MW1): 6 ML (InAs) /7 ML (GaSb) and Mid-Wavelength 2 (MW2): 9 ML (InAs) /7 ML (GaSb). The pixel center distance of the detector is 12 μm. At 80 K measurements, the detector has spectral response wavelength of 3-4 μm and 3.8-5.2 μm respectively. The MW1 detector has a peak detectivity of 6.32×10¹¹ cm·Hz^1/2W^-1. The MW2 detector has a peak detectivity of 2.84×10¹¹ cm·Hz^1/2W^-1. Infrared images of both wavebands have been taken using infrared imaging test by adjusting the device voltage bias. It’s the first time that a 1 280 × 1 024 InAs/GaSb Type II superlattice mid-wave length two-color infrared focal plane detector has been reported in China.