Si/Pd/GaAs Ohmic contacts formed by laser annealing

A non-alloying, stable Ohmie contacts on Si/Pd/GaAs were obtained. A specific contact resistivity of 2.75×10-6Ω·cm2 on 6.7×1017cm-3 substrates can be achieved after Ar+ laser annealing. The thermal stability is satisfactory for those annealed at 410℃ for about 8 hours in flowing forming gas.

Keywords

laser annealing Ohmic contact specific contact resistivity

Tools

Get Citation

Copy Citation Text

Fang Fang, S. S. Lau. Si/Pd/GaAs Ohmic contacts formed by laser annealing[J]. Chinese Journal of Lasers, 1990, 17(s1): 175

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites