ZnO-based ceramic films are deposited on Si (111) substrates by radio frequency magnetron sputtering technique, and the films are shocked by the Nd∶YAG laser. The effect of laser shock on the electrical property of ZnO-based ceramic films is investigated. The results show that after laser shock processing, the films′ grain size is reduced significantly and the surface are more smooth and compact. The electrical properties of films have been improved in varying degrees. The nonlinear coefficient is largest raised by 65.2%，the breakdown voltage is largest decreased by 38.92%, the leakage current density is largest decreased by 24.4%. After the laser shock processing, with the grain refinement and lattice distortion, the interface-state density is sharply increased, which leads to the improvement of the nonlinear coefficient. Therefore the electrical property of ZnO-based ceramic films is excellent.