A fabrication process for three-dimensional micro-tubes was developed using existing readout circuit electrode growth equipment and direct-write photolithography system. In the preparation process, the three-dimensional micro-tubes were first prepared on the surface of the readout circuit. The indium bumps were grown on the HgCdTe chip, and then flip-chip bonding was used to achieve interconnections between the 1k×1k array HgCdTe chip with 7.5 m pitch and the readout circuit. The controllable parameters include metal growth angle, growth rate, thickness, and metal type, etc. It is found that the height of the three-dimensional micro-tubes with 7.5 m pitch prepared by this process can reach 3.8 m, the height non-uniformity is less than 3%, and it can withstand the pressure of 7.6×10-5 N. The application of the three-dimensional micro-tubes reduces the requirements for the flatness of HgCdTe chips and the precision of interconnection equipment in the flip-chip bonding process, significantly improving the yield of interconnected infrared detectors with 7.5 m pitch.