Taking into account anisotropy, nonparabolicity of the conduction band, and geometrical confinement, we discuss the heavy-hole excitonic states in a strained GaxIn1-xAs/GaAs quantum dot for various Ga alloy contents. The strained quantum dot is considered as a spherical InAs dot surrounded by a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and Ga ion content is numerically measured. Interband optical energy with and without the parabolic effect is computed using structural confinement. The interband matrix element for different Ga concentrations is also calculated. The oscillator strength of interband transitions on the dot radius is studied at different Ga concentrations in the GaxIn1-xAs/GaAs quantum dot. Heavy-hole excitonic absorption spectra are recorded for various Ga alloy contents in the GaxIn1-xAs/GaAs quantum dot. Results show that oscillator strength diminishes when dot size decreases because of the dominance of the quantum size effect. Furthermore, exchange enhancement and exchange splitting increase as exciton confinement increases.