Thin films of polycrystalline (Ba1−xSrx)TiO₃ (x = 0.2 and 0.3) with Perovskite structure were prepared by a dip and dry technique on a platinum-coated silicon substrate. The good quality thin films with uniform microstructure and thickness were successfully produced by dip-coating techniques annealed at 730∘C for 1 h. The resulting thin film shows a well-developed dense polycrystalline structure with more uniform grain size distribution. The BST thin films were characterized for their structural, Raman spectroscopy, morphological properties, and complex impedance properties. The dielectric constant-frequency curve showed the good dielectric constant and loss dielectric loss with low-frequency dispersion. The BST 0.3 thin film reveals that the dielectric constant and dielectric loss at a frequency of 1 kHz were 578 and 0.02, respectively. The obtained results on dielectric properties can be analyzed in terms of the Maxwell–Wagner model.Thin films of polycrystalline (Ba1−xSrx)TiO₃ (x = 0.2 and 0.3) with Perovskite structure were prepared by a dip and dry technique on a platinum-coated silicon substrate. The good quality thin films with uniform microstructure and thickness were successfully produced by dip-coating techniques annealed at 730∘C for 1 h. The resulting thin film shows a well-developed dense polycrystalline structure with more uniform grain size distribution. The BST thin films were characterized for their structural, Raman spectroscopy, morphological properties, and complex impedance properties. The dielectric constant-frequency curve showed the good dielectric constant and loss dielectric loss with low-frequency dispersion. The BST 0.3 thin film reveals that the dielectric constant and dielectric loss at a frequency of 1 kHz were 578 and 0.02, respectively. The obtained results on dielectric properties can be analyzed in terms of the Maxwell–Wagner model.