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Chinese Journal of Lasers, Volume. 18, Issue 5, 324(1991)

Experimental studies of semiconductor laser with AlN films

[in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    Experimental reaulst for semiconductor lasers with facet antireflector and surface passivator by sputtered A1N films are reported for the first time. The results show that these LD with sputtered A1N film as surface passivator have good lasing properties.

    Keywords
    AlN filmSemiconductor laser
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental studies of semiconductor laser with AlN films[J]. Chinese Journal of Lasers, 1991, 18(5): 324

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    Paper Information

    Category: Laser physics

    Received: Apr. 17, 1989

    Accepted: --

    Published Online: Nov. 12, 2007

    The Author Email:

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology