Chinese Journal of Lasers, Volume. 31, Issue s1, 201(2004)

Optical Limiting Characteristic of Semiconductor Nano-Particles Bi2S3 and NiS

ZHANG Yun-dong1、*, ZHU Jun-jie2, ZHANG Yun-jun1, and YUAN Ping1
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    The optical limiting characteristic of semiconductor nano-particles Bi2S3 and NiS were investigated in experiment. Their nonlinear limiting thresholds are 0.11 J/cm2 and 0.21 J/cm2, respectively. From the result of the open Z-scan for the samples, the nonlinear absorption coefficients of Bi2S3 and NiS are β≈8 cm/GW and β≈9 cm/GW, respectively. It was found that the measured result of the closed scan of NiS in alcohol solution indicates the self-focusing effect in it. That is, the nonlinear refractive index of NiS solution n2>0, corresponding γ≈2.66×10-41 cm2/GW.

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    ZHANG Yun-dong, ZHU Jun-jie, ZHANG Yun-jun, YUAN Ping. Optical Limiting Characteristic of Semiconductor Nano-Particles Bi2S3 and NiS[J]. Chinese Journal of Lasers, 2004, 31(s1): 201

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    Paper Information

    Category: laser devices and laser physics

    Received: --

    Accepted: --

    Published Online: Jan. 29, 2013

    The Author Email: Yun-dong ZHANG (ydzhang@hit.edu.cn)

    DOI:

    CSTR:32186.14.

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