Chinese Journal of Lasers, Volume. 17, Issue 12, 717(1990)
A study of free-electron density and its spatial Fourier component excited by picosecond light pulses in GaAs
The theory and calculation results of the free electrons generated by picosecond light pulses at 1.064μm in semi-insulating GaAs are presented, and the variation of the spatial Fourier components of the free-electron density from deep levels and two-photon absorption versus the intensity of excitation pulses is discussed.
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[in Chinese], [in Chinese]. A study of free-electron density and its spatial Fourier component excited by picosecond light pulses in GaAs[J]. Chinese Journal of Lasers, 1990, 17(12): 717
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