Microelectronics, Volume. 55, Issue 1, 65(2025)
Study on Low Dose Rate Radiation Enhancement Effect of Lateral PNP Transistors with Different Structures
Low dose rate irradiation experiments were conducted on Lateral-PNP transistors fabricated using the same process to investigate the enhancement effects of low dose rate radiation damage in bipolar transistors with different perimeter-area ratios (P/A), base effective widths, emitter areas, and oxide layer thicknesses. Experimental results show that the gain of the Lateral-PNP bipolar transistor before and after irradiation is reduced by less than 50% at low dose rates, with the gain remaining greater than 100 after irradiation. The results indicate a significant improvement in the radiation resistance of the Lateral-PNP transistor through increases in the perimeter-area ratio (P/A), reduction of the base effective width, expansion of the emitter area, and thinning of the oxide layer thickness.
Get Citation
Copy Citation Text
SHUI Guohua, ZHU Mengdie, LONG Cuiping, LI Xiaolong, GAN Hehong, ZHAN Xiaoxiao, CHEN Junji, LI Xiang, LIN Chengpeng. Study on Low Dose Rate Radiation Enhancement Effect of Lateral PNP Transistors with Different Structures[J]. Microelectronics, 2025, 55(1): 65
Special Issue:
Received: Jul. 2, 2024
Accepted: Jun. 19, 2025
Published Online: Jun. 19, 2025
The Author Email: