Microelectronics, Volume. 55, Issue 1, 65(2025)

Study on Low Dose Rate Radiation Enhancement Effect of Lateral PNP Transistors with Different Structures

SHUI Guohua1... ZHU Mengdie1, LONG Cuiping1, LI Xiaolong2, GAN Hehong1, ZHAN Xiaoxiao1, CHEN Junji1, LI Xiang1 and LIN Chengpeng1 |Show fewer author(s)
Author Affiliations
  • 1Chongqing Semi-chip Electronics Co., Ltd., Chongqing 401332, P. R. China
  • 2Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Science, Urumqi 830011
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    Low dose rate irradiation experiments were conducted on Lateral-PNP transistors fabricated using the same process to investigate the enhancement effects of low dose rate radiation damage in bipolar transistors with different perimeter-area ratios (P/A), base effective widths, emitter areas, and oxide layer thicknesses. Experimental results show that the gain of the Lateral-PNP bipolar transistor before and after irradiation is reduced by less than 50% at low dose rates, with the gain remaining greater than 100 after irradiation. The results indicate a significant improvement in the radiation resistance of the Lateral-PNP transistor through increases in the perimeter-area ratio (P/A), reduction of the base effective width, expansion of the emitter area, and thinning of the oxide layer thickness.

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    SHUI Guohua, ZHU Mengdie, LONG Cuiping, LI Xiaolong, GAN Hehong, ZHAN Xiaoxiao, CHEN Junji, LI Xiang, LIN Chengpeng. Study on Low Dose Rate Radiation Enhancement Effect of Lateral PNP Transistors with Different Structures[J]. Microelectronics, 2025, 55(1): 65

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    Paper Information

    Special Issue:

    Received: Jul. 2, 2024

    Accepted: Jun. 19, 2025

    Published Online: Jun. 19, 2025

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.240220

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