Chinese Journal of Liquid Crystals and Displays, Volume. 36, Issue 5, 633(2021)
Inkjet printing PVP dielectric for flexible thin film transistor
Rapid development of flexible electronics requires thin film transistor (TFT) to have features of low power consumption, good bending resistance and ability to be fabricated at low temperature. Gate insulator is one of the key materials in TFT device. Organic gate insulator prepared by solution method has the advantages of low cost, strong flexibility and is suitable for large area processing. In this paper, polyvinylpyrrolidone (PVP) dielectric film was achieved by inkjet printing process. The composition difference of printed PVP films with different annealing temperature was analyzed by XPS, and leakage current, capacitance and transfer characteristic of PVP devices were obtained by semiconductor analyzer. TFT device with PVP film annealed at 200 ℃ showed leakage current density ≤10-4A/cm2 (5 V) and relative dielectric constant about 3.8. Saturation mobility of device based on glass substrate is 4.6 cm2/(V?s) and the Ion/Ioffratio is ≥105 while that for device based on PI substrate with bending radius of 20 mm is 2.8 cm2/(V?s) and 6×104, respectively. This result demonstrates that PVP dielectric is promising in flexible electronics.
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TAO Hong, LUO Hao-de, NING Hong-long, YAO Ri-hui, CAI Wei, ZHENG Xi-feng, WANG Yang, WANG Bo, CAO Hui, PENG Jun-biao. Inkjet printing PVP dielectric for flexible thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2021, 36(5): 633
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Received: Dec. 1, 2020
Accepted: --
Published Online: Aug. 26, 2021
The Author Email: CAI Wei (caiwei@jihualab.com)