Single factor optimization method was used to optimize the deposition parameters to obtain silver films with low resistivity. The influences of sputtering power, pressure and temperature on the resistivity and deposition rate of silver films were investigated. The results show that low sputtering power and high pressure are beneficial to reduce the resistivity. This should be ascribed to the low deposition rate under such conditions, which favors the migration of Ag atoms, thereby improving lattice integrity. Increasing substrate temperature can also reduce resistivity, but should not exceed 100 oC. In order to suppress agglomeration, nitrogen gas (N2) was added to the argon sputtering gas. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) spectra show that the (1 1 1) orientation of Ag lattice was promoted by N2, thus leading to suppression of agglomeration and refined grains. The surface roughness (RMS) and resistivity increased when N2 was added, but decreased after annealing, which may be caused by desorption of the residual nitrogen from the film during annealing. The results are useful for controlling the grain orientation of silver films and obtaining thermally stable silver films with low resistivity.