Frontiers of Optoelectronics, Volume. 17, Issue 2, 12200(2024)
Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier
In current documented studies, it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibitsuboptimal on-chip wavelength conversion efficiency from the C-band to the 2 μm band, generally falling below -20.0 dB.To address this issue, we present a novel wavelength conversion device assisted by a waveguide amplifier, incorporating bothAlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier, thereby achieving a notable conversionefficiency exceeding 0 dB. The noteworthy enhancement in efficiency can be attributed to the specific dispersion design ofthe AlGaAs wavelength converter, which enables an upsurge in conversion efficiency to -15.54 dB under 100 mW of pumppower. Furthermore, the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensationof over 15 dB. Avoiding the use of external optical amplifiers, this device enables efficient and high-bandwidth wavelengthconversion, showing promising applications in various fields, such as optical communication, sensing, imaging, and beyond.
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Chen Zhou, Xiwen He, Mingyue Xiao, Deyue Ma, Weibiao Chen, Zhiping Zhou. Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier[J]. Frontiers of Optoelectronics, 2024, 17(2): 12200
Category: RESEARCH ARTICLE
Received: Mar. 6, 2024
Accepted: May. 16, 2024
Published Online: Aug. 21, 2024
The Author Email: Zhiping Zhou (zjzhou@pku.edu.cn)