Remote epitaxy has drawn great attention as it overcomes the limitations of conventional epitaxy that need the lattice and thermal diffusion coefficient matching well. Indeed, the remote interaction through graphene can get the high-quality semiconductor materials, and it also can form the freestanding membranes by releasing from the substrates. Although the Ⅲ-Ⅴ and Ⅲ-nitride compound semiconductors have successfully remote epitaxial grown on graphene, the Ⅳ group semiconductors are rarely reported. Herein, the semiconductor germanium nanorods (NRs) on monolayer graphene (MLG) substrate were successfully remote epitaxy grown using molecular beam epitaxy in this paper. Furthermore, the process of growth, lifting off and transferring was studied. Results show that the Ge NRs oriented[111]c nucleated and grew along the wrinkles of graphene and the atomic steps of Cu-Ni substrate. With the growth temperature increasing, the density and height of Ge NRs decrease gradually. However, the diameter of Ge NRs has little change between 55 nm to 65 nm. Meanwhile, the Ge nanorods by self-assembly are strain free. The surface density of Ge nanorods is improved significantly by introducing few Sn to form GeSn nanorods. Meanwhile, we successfully lifted off the Ge NRs and then transferred to the Si substrate, providing a novel strategy for the hetero-integration. This work provides a foundation for future research into the remote epitaxy of group Ⅳ semiconductors, more importantly, the technique is closely relevant to the hetero-integration for advanced devices.