Chinese Journal of Lasers, Volume. 29, Issue 2, 149(2002)
Production and Storage Property of Ground Multiply-charged Ions of Sc3+ and Ti3+ in RF Ion Trap
By means of the selective trapping and two separated crossed ion beams at right angles, the ground low energy (electron volt) multiply charged Sc n+ (n=1～3) and Ti n+ (n=1～4) ions have been produced from refractory pure metal targets in a RF ion trap. The measured decay rates of Sc 3+ and Ti 3+ are 1.98 s -1 and 0.58 s -1 with the base pressure 5.6×10 -7 Pa, respectively.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Production and Storage Property of Ground Multiply-charged Ions of Sc3+ and Ti3+ in RF Ion Trap[J]. Chinese Journal of Lasers, 2002, 29(2): 149
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