With CrYAG as the saturable absorber, passively Q-switched microchip laser is obtained by laser diode (LD) end-pumped NdGdVO4 crystal. The NdGdVO4 crystal is a-cut with the size of 3 mm×3 mm×1 mm, and the atom fraction of Nd3+ ions is 0.5%. The pump end face of NdGdVO4 crystal is anti-reflective coated for 808 nm and high-reflective coated for 1.06 μm, which serves as the input mirror of laser cavity. The size of Cr4+YAG is 9.5 mm×1.1 mm, the initial transmission is 77%, and its outer end face is partially reflective coated for 1.06 μm (T=15%), which serves as the output mirror of laser cavity. The total length of laser cavity is 5~6 mm. The pump threshold of the laser is 4.62 W. When the pump power reaches 13.86 W, a maximum average output power of 0.98 W is obtained, corresponding to optical conversion efficiency of 7%, and slope efficiency of 9.5%. The highest repetition rate, largest pulse energy and shortest pulse width are measured to be 23.4 kHz, 44.6 μJ, and 2.9 ns respectively, corresponding to peak power of 15.4 kW.