4 inch β-Ga2O3 single crystals were grown by edge-defined film-fed growth (EFG) method in this work. The crystalline phase, crystal quality, defects, optical and electrical properties were studied. The Laue diffraction patterns is distinct and consistent which conformed to the characteristic of β-Ga2O3. The full width at half maximum (FWHM) of rocking curve of (400) plane is 57.57″. The density of etch pit by chemical corrosion is 1.06×104cm-2. The ultraviolet cut-off edges of the (100) plane is 262.1 nm and the optical bandgap is 4.67 eV. The electron concentration of the unintentionally doped crystal measured by C-V test is 7.77×1016 cm-3.