The successful fabrication of the room temperature broad-area InGaAs/InGaAsP separated confinement strained-layer multiple-quantum-well (MQW) pulsed lasers at 1.49 μm emission wavelength using LP-MOVPE is reported. The lowest threshold current density (Jth) at room temperature is 0.3 kA/cm for the cavity length of 2000 μm. The power saturation doesn’t occur yet while the pulsed output power is higher than 500 mW.Furthermore, the threshold current densities of these broad area lasers at varying cavity lengths have been investigated by comparing with those of the room temperature broad-area pulsed DH lasers grown by LP-MOVPE.