Aluminum nitride (AlN) powder was sintered to prepare polycrystalline particle materials for the growth of AlN crystal. It was found that the polycrystalline particle materials have significantly reduced impurities compared to the raw materials. The influence of different raw material porosity on crystal growth was simulated by numerical simulation software, and the distribution of temperature field inside the raw materials under the same crystal growth conditions was also analyzed. AlN crystal growth was carried out using raw materials with different granularity, and the most suitable temperature gradient and granularity of raw materials were obtained. Finally, AlN crystals with a diameter of 1 inch and a thickness of 15 mm were successfully grown using polycrystalline particles with particle sizes of 1~3 mm. 1 inch AlN wafer was obtained by cutting, grinding and polishing of the grown AlN crystals. The wafer was characterized by high-resolution X-ray diffraction (HRXRD) and Raman spectroscopy. The results show that the full width at half maximum (FWHM) of the HRXRD rocking curve is 154.66″, the peak position and FWHM of E2(high) phonon mode are 656.7 and 4.3 cm -1, respectively, indicating that the grown AlN has good crystallization quality.