Chinese Journal of Lasers, Volume. 38, Issue 8, 802003(2011)

Passively Mode-Locked Yb-Doped Fiber Laser with Graphene Epitaxially Grown on 6H-SiC Substrates

Liu Jiang1、*, Wei Rusheng2, Xu Jia1, Xu Xiangang2, and Wang Pu1
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  • 1[in Chinese]
  • 2[in Chinese]
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    We report all-normal-dispersion passively mode-locked Yb-doped fiber laser by graphene epitaxially grown on 6H-SiC substrates in a ring cavity configuration. Stable mode-locked pulses of the fiber laser are obtained at about 250 mW incident pump power and the pulse repetition rate is 1.05 MHz; Increasing the incident pump power to 480 mW, the average output power is 20 mW, which corresponds to single pulse energy of up to 19 nJ with pulse width of about 520 ps.

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    Liu Jiang, Wei Rusheng, Xu Jia, Xu Xiangang, Wang Pu. Passively Mode-Locked Yb-Doped Fiber Laser with Graphene Epitaxially Grown on 6H-SiC Substrates[J]. Chinese Journal of Lasers, 2011, 38(8): 802003

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    Paper Information

    Category: Laser physics

    Received: Mar. 28, 2011

    Accepted: --

    Published Online: Jul. 14, 2011

    The Author Email: Jiang Liu (liujiang@emails.bjut.edu.cn)

    DOI:10.3788/cjl201138.0802003

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